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Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor

In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor. Despite this benefit, reducing the transconductance of Junctionless transistors due to reduced carrier velocity...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Egile Nagusiak: reyhaneh ejlali, saeed haji-nasiri, alireza Kashaniniya, Arash Dana
Formatua: Artigo
Hizkuntza:Persa
Argitaratua: Semnan University 2023-03-01
Saila:مجله مدل سازی در مهندسی
Gaiak:
Sarrera elektronikoa:https://modelling.semnan.ac.ir/article_7287_391cc383bb1f82e8396b1db815d3a06e.pdf
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