Nitrogen-vacancy defects in germanium
While nitrogen doping has been investigated extensively in silicon, there is only limited information on its interaction with vacancies in germanium, despite most point defect processes in germanium being vacancy controlled. Thus, spin polarized density functional theory calculations are used to exa...
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
AIP Publishing LLC
2022-04-01
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| Серии: | AIP Advances |
| Online-ссылка: | http://dx.doi.org/10.1063/5.0080958 |
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