Electronic structure calculations on gallium-vacancy defects in Si1-xGex
Abstract Silicon germanium (Si1 − xGex) has emerged as a mainstream nanoelectronic material and as such its defect processes and energetics are technologically important. In semiconductor alloys the interaction of intrinsic point defects such as vacancies with dopant atoms are critical for the physi...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
Nature Portfolio
2025-11-01
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| Sraith: | Scientific Reports |
| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1038/s41598-025-25115-z |
| Clibeanna: |
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