An impact of frequency on capacitances of partially-depleted SOI MOSFETs
A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary resul...
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| Hauptverfasser: | , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
National Institute of Telecommunications
2000-12-01
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| Schriftenreihe: | Journal of Telecommunications and Information Technology |
| Schlagworte: | |
| Online-Zugang: | https://jtit.pl/jtit/article/view/26 |
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