Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activatio...
Gardado en:
| Principais autores: | , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2021-06-01
|
| Series: | Micromachines |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2072-666X/12/7/751 |
| Tags: |
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|