Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against measurement data. The presence of traps and activatio...
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| Autors principals: | , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2021-06-01
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| Col·lecció: | Micromachines |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/2072-666X/12/7/751 |
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