Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si
Abstract GaAs-on-Si templates with two different dislocation filter layers (DFLs) were grown at 550 °C low-temperature (LT)-DFL and 660 °C high-temperature (HT)-DFL using metal organic vapor-phase epitaxy and the effects of the growth temperature were studied. The threading dislocation density (TDD)...
保存先:
| 主要な著者: | , , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
SpringerOpen
2022-12-01
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| シリーズ: | Nanoscale Research Letters |
| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1186/s11671-022-03762-9 |
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