Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes

The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR GaAs:Cr (high-resistive gallium arsenide compensated with chromium) were studied by the optical pump–terahertz probe technique. Charge carrier...

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Autors principals:	Irina A. Kolesnikova, Daniil A. Kobtsev, Ruslan A. Redkin, Vladimir I. Voevodin, Anton V. Tyazhev, Oleg P. Tolbanov, Yury S. Sarkisov, Sergey Yu. Sarkisov, Victor V. Atuchin
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2021-12-01
Col·lecció:	Photonics
Matèries:	SI GaAs:Cr HR GaAs:Cr optical pump–terahertz probe charge carrier lifetime Shockley–Read–Hall recombination Auger recombination
Accés en línia:	https://www.mdpi.com/2304-6732/8/12/575
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