Atomistic calculations of the precursor molecular diffusivity at rarefaction: Understanding gas transport in semiconductor fabrication lines

Accurate knowledge of gas-phase diffusion properties of metal-containing precursors is essential for optimizing semiconductor manufacturing processes such as chemical vapour deposition (CVD) and atomic layer deposition (ALD). In this study, we employ classical molecular dynamics (MD) simulations to...

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Detalles Bibliográficos

Principais autores:	Ramisetti Lalitha, Neha Kumari, Saurish Das, Keerthi Gowdaru, Nilanajan Mondal, Chirodeep Bakli, Sourav Mondal
Formato:	Artigo
Idioma:	Inglês
Publicado:	Elsevier 2026-09-01
Series:	Results in Engineering
Assuntos:	Diffusion Brownian dynamics Molybdenum precursors Semiconductor Molecular dynamics simulation Knudsen number
Acceso en liña:	http://www.sciencedirect.com/science/article/pii/S2590123026025594
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