Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges
Highlights This review outlines the emergence of oxide semiconductors as promising channel materials for high-density, low-power next-generation memory applications. Adsorption and reaction mechanisms of atomic layer deposition have enabled the design of high-performance oxide semiconductors for nex...
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| Hlavní autoři: | , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
SpringerOpen
2026-01-01
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| Edice: | Nano-Micro Letters |
| Témata: | |
| On-line přístup: | https://doi.org/10.1007/s40820-025-02013-7 |
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