Atomistic calculations of the precursor molecular diffusivity at rarefaction: Understanding gas transport in semiconductor fabrication lines

Accurate knowledge of gas-phase diffusion properties of metal-containing precursors is essential for optimizing semiconductor manufacturing processes such as chemical vapour deposition (CVD) and atomic layer deposition (ALD). In this study, we employ classical molecular dynamics (MD) simulations to...

Cijeli opis

Bibliografski detalji

Glavni autori:	Ramisetti Lalitha, Neha Kumari, Saurish Das, Keerthi Gowdaru, Nilanajan Mondal, Chirodeep Bakli, Sourav Mondal
Format:	Artigo
Jezik:	Inglês
Izdano:	Elsevier 2026-09-01
Serija:	Results in Engineering
Teme:	Diffusion Brownian dynamics Molybdenum precursors Semiconductor Molecular dynamics simulation Knudsen number
Online pristup:	http://www.sciencedirect.com/science/article/pii/S2590123026025594
Oznake:	Dodaj oznaku Bez oznaka, Budi prvi tko označuje ovaj zapis!