Progress of InGaN-Based Red Micro-Light Emitting Diodes
InGaN-based red micro-size light-emitting diodes (μLEDs) have become very attractive. Compared to common AlInGaP-based red µLEDs, the external quantum efficiency (EQE) of InGaN red µLEDs has less influence from the size effect. Moreover, the InGaN red µLEDs exhibit a much more robust device performa...
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| Hlavní autoři: | , , , , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI AG
2022-04-01
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| Edice: | Crystals |
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| On-line přístup: | https://www.mdpi.com/2073-4352/12/4/541 |
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