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Effects of Device and Contact Dimension Scaling on the Performance of InGaN/GaN Quantum Dot Light-Emitting Diodes

Inspired by the growing demand for small and effective optoelectronic devices, this paper presents a simulation-based analysis of InGaN/GaN quantum dot light-emitting diode, focusing on the effects of systematic variation in both anode and cathode contact regions, as well as overall device size. Two...

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Principais autores: Muneeba Gul, Muhammad Usman, Shazma Ali, Ahmed Ali
פורמט: Artigo
שפה:Inglês
יצא לאור: MDPI AG 2026-03-01
סדרה:Photonics
נושאים:
quantum dot light-emitting diode (QDLED)
contacts
size
internal quantum efficiency
גישה מקוונת:https://www.mdpi.com/2304-6732/13/4/320
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