Effects of Device and Contact Dimension Scaling on the Performance of InGaN/GaN Quantum Dot Light-Emitting Diodes

Inspired by the growing demand for small and effective optoelectronic devices, this paper presents a simulation-based analysis of InGaN/GaN quantum dot light-emitting diode, focusing on the effects of systematic variation in both anode and cathode contact regions, as well as overall device size. Two...

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Hlavní autoři:	Muneeba Gul, Muhammad Usman, Shazma Ali, Ahmed Ali
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2026-03-01
Edice:	Photonics
Témata:	quantum dot light-emitting diode (QDLED) contacts size internal quantum efficiency
On-line přístup:	https://www.mdpi.com/2304-6732/13/4/320
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