Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p<sup>+</sup>-Al<sub>0.55</sub>Ga<sub>0.45</sub>N/AlGaN/n<sup>+</sup>-Al<sub>0.55</sub>Ga<sub>0.45</sub>N polarization tunnel junctions (PTJs) were modeled to promote carrier tunnelin...
Spremljeno u:
| Glavni autori: | , , , , , , , , |
|---|---|
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI AG
2021-12-01
|
| Serija: | Nanomaterials |
| Teme: | |
| Online pristup: | https://www.mdpi.com/2079-4991/11/12/3328 |
| Oznake: |
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|