Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p<sup>+</sup>-Al<sub>0.55</sub>Ga<sub>0.45</sub>N/AlGaN/n<sup>+</sup>-Al<sub>0.55</sub>Ga<sub>0.45</sub>N polarization tunnel junctions (PTJs) were modeled to promote carrier tunnelin...
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| Principais autores: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2021-12-01
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| Series: | Nanomaterials |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2079-4991/11/12/3328 |
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