n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass greater energy barriers that hindered holes injection....

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Hlavní autoři:	Jamshad Bashir, Muhammad Usman, Dmitri Sergeevich Arteev, Waqas Saeed
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Taylor & Francis Group 2025-04-01
Edice:	Journal of Information Display
Témata:	Hybrid tunnel junction barrier height tunneling AlGaN
On-line přístup:	https://www.tandfonline.com/doi/10.1080/15980316.2024.2412104
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