n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes
This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass greater energy barriers that hindered holes injection....
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Taylor & Francis Group
2025-04-01
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| Colecção: | Journal of Information Display |
| Assuntos: | |
| Acesso em linha: | https://www.tandfonline.com/doi/10.1080/15980316.2024.2412104 |
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