An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED
Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, an...
Gorde:
| Egile Nagusiak: | , , , , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI AG
2022-08-01
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| Saila: | Crystals |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2073-4352/12/8/1108 |
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