An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED
Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, an...
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| Autores principales: | , , , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2022-08-01
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| Colección: | Crystals |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/2073-4352/12/8/1108 |
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