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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Shiqiang Lu, Jinchai Li, Kai Huang, Guozhen Liu, Yinghui Zhou, Duanjun Cai, Rong Zhang, Junyong Kang
Format: Artigo
Sprache:Inglês
Veröffentlicht: SpringerOpen 2021-06-01
Schriftenreihe:Nanoscale Research Letters
Schlagworte:
InGaN
Micro-LED
Quantum efficiency
Low current density
Online-Zugang:https://doi.org/10.1186/s11671-021-03557-4
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