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Designs of InGaN Micro-LED Structure for Improving Quantum Efficiency at Low Current Density

Abstract Here we report a comprehensive numerical study for the operating behavior and physical mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis for the polarization effect shows that micro-LED suffers a severer quantum-confined Stark effect at low current...

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Hlavní autoři: Shiqiang Lu, Jinchai Li, Kai Huang, Guozhen Liu, Yinghui Zhou, Duanjun Cai, Rong Zhang, Junyong Kang
Médium: Artigo
Jazyk:Inglês
Vydáno: SpringerOpen 2021-06-01
Edice:Nanoscale Research Letters
Témata:
InGaN
Micro-LED
Quantum efficiency
Low current density
On-line přístup:https://doi.org/10.1186/s11671-021-03557-4
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