Impact of process-dependent SiNx passivation on proton-induced degradation in GaN MIS-HEMTs

In this study, AlGaN/GaN heterojunction-based metal–insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) were fabricated using silicon nitride (SiN) passivation layer. This layer was deposited under the different gas ratio conditions. The effects of proton irradiation on the curren...

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Үндсэн зохиолчид:	Young Jun Yoon, Jae Sang Lee, In Man Kang, Eun Je Lee, Dong-Seok Kim
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Elsevier 2021-12-01
Цуврал:	Results in Physics
Нөхцлүүд:	AlGaN/GaN heterojunction MIS-HEMT SiN Passivation layer Trap
Онлайн хандалт:	http://www.sciencedirect.com/science/article/pii/S2211379721010123
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!