Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and insid...

पूर्ण विवरण

ग्रंथसूची विवरण

मुख्य लेखकों:	Po-Chien Chou, Szu-Hao Chen, Ting-En Hsieh, Stone Cheng, Jesús A. del Alamo, Edward Yi Chang
स्वरूप:	Artigo
भाषा:	Inglês
प्रकाशित:	MDPI AG 2017-02-01
श्रृंखला:	Energies
विषय:	DC stress degradation GaN HEMT GaN MIS-HEMT reliability failure mechanisms trapping
ऑनलाइन पहुंच:	http://www.mdpi.com/1996-1073/10/2/233
टैग:	टैग जोड़ें कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!