Investigation of Proton Irradiation-Enhanced Device Performances in AlGaN/GaN HEMTs
We have studied the effects of proton irradiation on the AlGaN/GaN HEMTs with AlN buffer layer as well as conventional GaN buffer layer. It was found that a short time proton irradiation (~ 50 sec) can promote beneficial effects on device performances, which results in great reduction in the...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acceso en liña: | https://ieeexplore.ieee.org/document/9615384/ |
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