Planarization Modeling Based on Contact Mode Between Pad Asperity and Oxide Pattern During CMP
Chemical Mechanical Planarization (CMP) is an indispensable process of forming multilayer integrated circuit. However, it is necessary to understand the pattern in order to achieve global planarization. Material Removal Rate (MRR) depends on the pattern density in the actual CMP process and is requi...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Korean Society for Precision Engineering
2019-04-01
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| coleção: | 한국정밀공학회지 |
| Assuntos: | |
| Acesso em linha: | http://jkspe.or.kr/upload/pdf/NODE07994408.pdf |
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