Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices

Abstract Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data processing, although emulation of synaptic behavior with analog weight updates remains a challenge. Standard filamentary and area‐dependent resistive switching exhibit characteristic differences in the...

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Autores principales:	Stephan Aussen, Felix Cüppers, Carsten Funck, Janghyun Jo, Stephan Werner, Christoph Pratsch, Stephan Menzel, Regina Dittmann, Rafal Dunin‐Borkowski, Rainer Waser, Susanne Hoffmann‐Eifert
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	Wiley-VCH 2023-12-01
Colección:	Advanced Electronic Materials
Materias:	analog digital electron energy loss spectroscopy electronic conduction mechanism memristors ReRAM
Acceso en línea:	https://doi.org/10.1002/aelm.202300520
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