Analysis, Design, and Experimental Results for a High-Frequency ZVZCS Galvanically Isolated PSFB DC-DC Converter over a Wide Operating Range Using GaN-HEMT
This paper investigates the potential of the emerging gallium nitride (GaN) high-electron mobility transistors (HEMT) power devices to meet certain power conversion challenges. The advantages of utilizing GaN HEMT transistors in a high-frequency, high-power isolated DC-DC topology are explored exper...
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| Hoofdauteur: | |
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| Formaat: | Artigo |
| Taal: | Inglês |
| Gepubliceerd in: |
MDPI AG
2022-11-01
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| Reeks: | World Electric Vehicle Journal |
| Onderwerpen: | |
| Online toegang: | https://www.mdpi.com/2032-6653/13/11/206 |
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