Wideband Modeling of DC-DC Buck Converter with GaN Transistors
The general wideband modeling method of the power converter is presented on the example of DC-DC buck converter with GaN High Electron Mobility Transistors (HEMT). The models of all basic and parasitic components are briefly described. The two methods of Printed Circuit Board (PCB) layout parameter...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2021-07-01
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| Serie: | Energies |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/1996-1073/14/15/4430 |
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