Design and Assessment of Hybrid MTJ/CMOS Circuits for In-Memory-Computation

Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumption during the MTJ write process is a matter o...

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Bibliografski detalji

Glavni autori:	Prashanth Barla, Hemalatha Shivarama, Ganesan Deepa, Ujjwal Ujjwal
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2024-01-01
Serija:	Journal of Low Power Electronics and Applications
Teme:	magnetic tunnel junction spin-hall effect spin transfer torque non-volatile voltage-gated spin orbit torque in-memory-computation
Online pristup:	https://www.mdpi.com/2079-9268/14/1/3
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