Design and Assessment of Hybrid MTJ/CMOS Circuits for In-Memory-Computation

Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumption during the MTJ write process is a matter o...

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Autors principals:	Prashanth Barla, Hemalatha Shivarama, Ganesan Deepa, Ujjwal Ujjwal
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2024-01-01
Col·lecció:	Journal of Low Power Electronics and Applications
Matèries:	magnetic tunnel junction spin-hall effect spin transfer torque non-volatile voltage-gated spin orbit torque in-memory-computation
Accés en línia:	https://www.mdpi.com/2079-9268/14/1/3
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