Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
<p>Abstract</p><p>We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold curr...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
SpringerOpen
2007-01-01
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| Цуврал: | Nanoscale Research Letters |
| Нөхцлүүд: | |
| Онлайн хандалт: | http://dx.doi.org/10.1007/s11671-007-9097-x |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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