Coupled InGaAs Quantum Dots for Electro-Optic Modulation
We investigated the growth of vertically coupled In<sub>0.75</sub>Ga<sub>0.25</sub>As quantum dots (QDs) by varying the GaAs spacer thickness (<i>d</i>). Vertically-aligned triple-layer QDs of uniform size and highest accumulated strain are formed with <i>d</i> = 5 nm. The electroluminescence (EL) c...
Tallennettuna:
| Päätekijät: | , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2021-09-01
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| Sarja: | Crystals |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/2073-4352/11/10/1159 |
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