Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Abstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiome...

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Egile Nagusiak:	Sergii Golovynskyi, Oleksandr I. Datsenko, Luca Seravalli, Giovanna Trevisi, Paola Frigeri, Ivan S. Babichuk, Iuliia Golovynska, Junle Qu
Formatua:	Artigo
Hizkuntza:	Inglês
Argitaratua:	SpringerOpen 2018-04-01
Saila:	Nanoscale Research Letters
Gaiak:	Nanostructure Quantum dot Metamorphic InAs/InGaAs Photoconductivity Photoluminescence
Sarrera elektronikoa:	http://link.springer.com/article/10.1186/s11671-018-2524-3
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