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Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Abstract Photoelectric properties of the metamorphic InAs/In x Ga1 − x As quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiome...

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I tiakina i:
Ngā taipitopito rārangi puna kōrero
Ngā kaituhi matua: Sergii Golovynskyi, Oleksandr I. Datsenko, Luca Seravalli, Giovanna Trevisi, Paola Frigeri, Ivan S. Babichuk, Iuliia Golovynska, Junle Qu
Hōputu: Artigo
Reo:Inglês
I whakaputaina: SpringerOpen 2018-04-01
Rangatū:Nanoscale Research Letters
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Urunga tuihono:http://link.springer.com/article/10.1186/s11671-018-2524-3
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