An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration
SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density of converters significantly. However, the fast switching processes of SiC MOSFETs cause serious crosstalk problems in bridge-arm configurations, which restricts the devices’ perfo...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
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MDPI AG
2021-01-01
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| Edice: | Energies |
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| On-line přístup: | https://www.mdpi.com/1996-1073/14/3/683 |
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