An Improved Analytical Model for Crosstalk of SiC MOSFET in a Bridge-Arm Configuration
SiC MOSFETs have an excellent characteristic of high switching speed, which can improve the efficiency and power density of converters significantly. However, the fast switching processes of SiC MOSFETs cause serious crosstalk problems in bridge-arm configurations, which restricts the devices’ perfo...
-д хадгалсан:
| Үндсэн зохиолчид: | , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2021-01-01
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| Цуврал: | Energies |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/1996-1073/14/3/683 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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