Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes

We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was −1.15 × 10⁻⁹ A, which was one o...

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Bibliografiske detaljer

Principais autores:	Gun-Hee Lee, Tran-Viet Cuong, Dong-Kyu Yeo, Hyunjin Cho, Beo-Deul Ryu, Eun-Mi Kim, Tae-Sik Nam, Eun-Kyung Suh, Tae-Hoon Seo, Chang-Hee Hong
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2021-10-01
Serier:	Applied Sciences
Fag:	light emitting diodes h-BN passivation operating temperature
Online adgang:	https://www.mdpi.com/2076-3417/11/19/9321
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