Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes
We introduce a low temperature process for coating InGaN/GaN light-emitting diodes (LEDs) with h-BN as a passivation layer. The effect of h-BN on device performance and reliability is investigated. At −5 V, the leakage current of the h-BN passivated LED was −1.15 × 10<sup>−9</sup> A, which was one o...
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| Автори: | , , , , , , , , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
MDPI AG
2021-10-01
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| Серія: | Applied Sciences |
| Предмети: | |
| Онлайн доступ: | https://www.mdpi.com/2076-3417/11/19/9321 |
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