Bandgap variation in semiconductor thin films of the solid solution (CdTe)1-x(In2Te3)x deposited by RF sputtering
(CdTe) _1-x (In _2 Te _3 ) _x films, with 0.1 ≤ x ≤ 1, were deposited by radio frequency sputtering on glass substrates employing different targets, prepared for each composition. The x-ray diffractograms were consistent with substitutional In incorporation into the CdTe lattice up to a value of x =...
Kaydedildi:
| Asıl Yazarlar: | , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IOP Publishing
2024-01-01
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| Seri Bilgileri: | Materials Research Express |
| Konular: | |
| Online Erişim: | https://doi.org/10.1088/2053-1591/ad3f78 |
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