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Bandgap variation in semiconductor thin films of the solid solution (CdTe)1-x(In2Te3)x deposited by RF sputtering

(CdTe) _1-x (In _2 Te _3 ) _x films, with 0.1 ≤ x ≤ 1, were deposited by radio frequency sputtering on glass substrates employing different targets, prepared for each composition. The x-ray diffractograms were consistent with substitutional In incorporation into the CdTe lattice up to a value of x =...

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Bibliografiske detaljer
Principais autores: Miguel Meléndez-Lira, Sergio Jiménez-Sandoval, Martin Zapata-Torres, Alejandra García-Sotelo, Eric Noé Hernández Rodríguez, Arturo Hernández-Hernández
Format: Artigo
Sprog:Inglês
Udgivet: IOP Publishing 2024-01-01
Serier:Materials Research Express
Fag:
Online adgang:https://doi.org/10.1088/2053-1591/ad3f78
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