Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs

We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range o...

全面介紹

書目詳細資料

Principais autores:	T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, Yu. B. Myroshnichenko, D. P. Stratilat, V. P. Tartachnyk, V. V. Shlapatska
格式:	Artigo
語言:	Inglês
出版:	Institute for Nuclear Research, National Academy of Sciences of Ukraine 2023-03-01
叢編:	Ядерна фізика та енергетика
主題:	ingan light emitting diode negative differential resistance current-voltage characteristics electroluminescence characteristics.
在線閱讀:	http://jnpae.kinr.kiev.ua/24.1/Articles_PDF/jnpae-2023-24-0027-Mosiuk.pdf
標簽:	添加標簽 沒有標簽, 成為第一個標記此記錄!