Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2014-12-01
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| Series: | Ядерна фізика та енергетика |
| Assuntos: | |
| Acceso en liña: | http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdf |
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