Electrical and optical characteristics of GaP diodes, irradiated with 2 MeV electrons
Serial green and red GaP light emitting diodes were studied. Structures were irradiated at room temperatures with 2 MeV electrons in pulse mode and electrical characteristics were measured at 77 – 300 K. It was observed the new stage of negative differential resistance at low temperature (90 K) and...
সংরক্ষণ করুন:
| প্রধান লেখক: | , , , , , |
|---|---|
| বিন্যাস: | Artigo |
| ভাষা: | Inglês |
| প্রকাশিত: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2014-12-01
|
| মালা: | Ядерна фізика та енергетика |
| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | http://jnpae.kinr.kiev.ua/15.4/Articles_PDF/jnpae-2014-15-0349-Konoreva.pdf |
| ট্যাগগুলো: |
কোনো ট্যাগ নেই, প্রথমজন হিসাবে ট্যাগ করুন!
|