Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs

We studied light-emitting diodes (LEDs) with quantum dots маde on the basis of a solid solution of In0.21Ga0.79N. Measurements of current-voltage characteristics and electroluminescence characteristics were carried out in the range of 77 ÷ 300 K. On the current-voltage characteristics in the range o...

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Hlavní autoři:	T. I. Mosiuk, R. M. Vernydub, P. G. Lytovchenko, Yu. B. Myroshnichenko, D. P. Stratilat, V. P. Tartachnyk, V. V. Shlapatska
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Institute for Nuclear Research, National Academy of Sciences of Ukraine 2023-03-01
Edice:	Ядерна фізика та енергетика
Témata:	ingan light emitting diode negative differential resistance current-voltage characteristics electroluminescence characteristics.
On-line přístup:	http://jnpae.kinr.kiev.ua/24.1/Articles_PDF/jnpae-2023-24-0027-Mosiuk.pdf
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