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Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the...

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Principais autores: Ahmed S. Razeen, Dharmraj Kotekar‐Patil, Mengting Jiang, Eric X. Tang, Gao Yuan, Jesper Ong, Viet C. Wyen, K. Radhakrishnan, Sudhiranjan Tripathy
Format: Artigo
Sprog:Inglês
Udgivet: Wiley-VCH 2024-03-01
Serier:Advanced Materials Interfaces
Fag:
AlGaN/GaN HEMT
MSM
nanoholes
nanophotonics
UV Photodetectors
Online adgang:https://doi.org/10.1002/admi.202300726
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