Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the...

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Үндсэн зохиолчид:	Ahmed S. Razeen, Dharmraj Kotekar‐Patil, Mengting Jiang, Eric X. Tang, Gao Yuan, Jesper Ong, Viet C. Wyen, K. Radhakrishnan, Sudhiranjan Tripathy
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2024-03-01
Цуврал:	Advanced Materials Interfaces
Нөхцлүүд:	AlGaN/GaN HEMT MSM nanoholes nanophotonics UV Photodetectors
Онлайн хандалт:	https://doi.org/10.1002/admi.202300726
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!