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First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices

In the reset state, the decay reaction mechanism and bipolar switching properties of vanadium oxide thin film RRAM devices for LRS/HRS are investigated and discussed here. To discover the properties of <i>I-V</i> switching curves, the first order rate law behaviors of the reset state between the res...

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Principais autores: Kai-Huang Chen, Chien-Min Cheng, Na-Fu Wang, Hsiao-Wen Hung, Cheng-Ying Li, Sean Wu
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2023-01-01
coleção:Nanomaterials
Assuntos:
RRAM
vanadium oxide
decay
reaction rate constant
Acesso em linha:https://www.mdpi.com/2079-4991/13/1/198
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