Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film’s Resistance and Random Access Memory Devices
In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film’s resistive random access memory (RRAM) devices for using different top electrode materials were observed and discussed. Different related electrical properties and trans...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
MDPI AG
2025-03-01
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| Цуврал: | Nanomaterials |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://www.mdpi.com/2079-4991/15/6/448 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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