Oxygen Ion Concentration Distribution Effect on Bipolar Switching Properties of Neodymium Oxide Film’s Resistance and Random Access Memory Devices
In this study, the bipolar resistance switching behavior and electrical conduction transport properties of a neodymium oxide film’s resistive random access memory (RRAM) devices for using different top electrode materials were observed and discussed. Different related electrical properties and trans...
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| Auteurs principaux: | , , , |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
MDPI AG
2025-03-01
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| Collection: | Nanomaterials |
| Sujets: | |
| Accès en ligne: | https://www.mdpi.com/2079-4991/15/6/448 |
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